spice device model si7448dp vishay siliconix this document is intended as a spice modeling guideline and does not constitute a commercial product data sheet. designers sho uld refer to the appropriate data sheet of the same number for guaranteed specification limits. document number: 71675 www.vishay.com 10-jul-01 1 n-channel 20-v (d-s) fast switching mosfet characteristics ? n-channel vertical dmos ? macro model (subcircuit model) ? level 3 mos ? apply for both linear and switching application ? accurate over the ? 55 to 125 c temperature range ? model the gate charge, transient, and diode reverse recovery characteristics description the attached spice model describes the typical electrical characteristics of the n-channel vertical dmos. the subcircuit model is extracted and optimized over the ? 55 to 125 c temperature ranges under the pulsed 0-to-5v gate drive. the saturated output impedance is best fit at the gate bias near the threshold voltage. a novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched c g d model. all model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. subcircuit model schematic
spice device model si7448dp vishay siliconix www.vishay.com document number: 71675 2 10-jul-01 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition simulated data measured data unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.80 v on-state drain current a i d(on) v ds 5v, v gs = 4.5v 479 a v gs = 4.5v, i d = 22a 0.0053 0.0054 drain-source on-state resistance a r ds(on) v gs = 2.5v, i d = 19a 0.0073 0.0075 ? forward transconductance a g fs v ds = 15v, i d = 22a 94 90 s diode forward voltage a v sd i s = 3a, v gs = 0v 0.74 0.80 v dynamic b total gate charge q g 38 38 gate-source charge q gs 88 gate-drain charge q gd v ds = 10v, v gs = 4.5v, i d = 21a 8.5 8.5 nc turn-on delay time t d(on) 18 22 rise time t r 23 22 turn-off delay time t d(off) 56 125 fall time t f v dd = 10v, r l = 10 ? i d ? 1a, v gen = 10v, r g = 6 ? 106 60 source-drain reverse recovery time t rr i f = 3a, di/dt = 100 a/ s 59 60 ns notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
spice device model si7448dp vishay siliconix document number: 71675 www.vishay.com 10-jul-01 3 comparison of model with measured data (t j =25 c unless otherwise noted)
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